to-220 -3l plastic-encapsulate transistors 2SB507 transistor (pnp) features z low collector-emitter saturation voltage vce(sat)=-1v(max)@i c =-2a,i b =-0.2a z dc current gain h fe =40~320@ic=-1a z complementray to npn 2sd313 maximum ratings ( t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -continuous -3 a p c collector power dissipation 1.75 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-20v, i e =0 -100 a collector cut-off current i ceo v ce =-60v, i e =0 -5 ma emitter cut-off current i ebo v eb =-4v, i c =0 -1 ma h fe(1) (1) v ce =-2v, i c =-1a 40 320 dc current gain (1) h fe(2) (1) v ce =-2v, i c =-0.1a 40 collector-emitter saturation voltage (1) v ce(sat) (1) i c =-2a, i b =-200ma -1 v base-emitter voltage (1) v be (1) v ce =-2v, i c =-1a -1.5 v transition frequency f t v ce =-5v, i c =-500ma,f=1mhz 5 mhz (1) pulse test: pulse width=300 s,duty cycle 2.0% classification of h fe(1) rank c d e f range 40-80 60-120 100-200 160-320 to-220 -3l 1. base 2. collector 3. emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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